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Motorola Semiconductors - GENERAL PURPOSE TRANSISTOR

Numéro de référence 2N4264
Description GENERAL PURPOSE TRANSISTOR
Fabricant Motorola Semiconductors 
Logo Motorola Semiconductors 





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2N4264 fiche technique
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
General Purpose Transistor
NPN Silicon
2N4264
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
15
30
6.0
200
350
2.8
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.0
8.0
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Ambient
RqJA
357
Thermal Resistance, Junction to Case
RqJC
125
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Base Cutoff Current
(VCE = 12 Vdc, VEB(off) = 0.25 Vdc)
(VCE = 12 Vdc, VEB(off) = 0.25 Vdc, TA = 100°C)
Collector Cutoff Current
(VCE = 12 Vdc, VEB(off) = 0.25 Vdc)
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
Unit
°C/W
°C/W
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBEV
ICEX
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Min Max Unit
Vdc
15 —
Vdc
30 —
Vdc
6.0 —
µAdc
— 0.1
— 10
nAdc
— 100
REV 2
2–22
Motorola Small–Signal Transistors, FETs and Diodes Device Data

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