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What is 2N4124?

This electronic component, produced by the manufacturer "Motorola Semiconductors", performs the same function as "GENERAL PURPOSE TRANSISTOR".


2N4124 Datasheet PDF - Motorola Semiconductors

Part Number 2N4124
Description GENERAL PURPOSE TRANSISTOR
Manufacturers Motorola Semiconductors 
Logo Motorola Semiconductors Logo 


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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
General Purpose Transistors
NPN Silicon
2N4123
2N4124
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol 2N4123 2N4124
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
30 25
40 30
5.0
200
625
5.0
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Ambient
RqJA
200
Thermal Resistance, Junction to Case
RqJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IE = 0)
2N4123
2N4124
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
2N4123
2N4124
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
Unit
°C/W
°C/W
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Min Max Unit
Vdc
30 —
25 —
Vdc
40 —
30 —
5.0 — Vdc
— 50 nAdc
— 50 nAdc
2–14
Motorola Small–Signal Transistors, FETs and Diodes Device Data


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2N4124 electronic component.


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