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PDF MBM29LV200BC-70 Data sheet ( Hoja de datos )
| Número de pieza | MBM29LV200BC-70 | |
| Descripción | 2M (256K x 8/128K x 16) BIT FLASH MEMORY | |
| Fabricantes | Fujitsu | |
| Logotipo |  |
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FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20865-3E
FLASH MEMORY
CMOS
2M (256K × 8/128K × 16) BIT
MBM29LV200TC-70/-90/-12/MBM29LV200BC-70/-90/-12
s FEATURES
• Single 3.0 V read, program, and erase
Minimizes system level power requirements
• Compatible with JEDEC-standard commands
Uses same software commands as E2PROMs
• Compatible with JEDEC-standard world-wide pinouts
48-pin TSOP(I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type)
44-pin SOP (Package suffix: PF)
• Minimum 100,000 program/erase cycles
• High performance
70 ns maximum access time
• Sector erase architecture
One 8K word, two 4K words, one 16K word, and three 32K words sectors in word mode
One 16K byte, two 8K bytes, one 32K byte, and three 64K bytes sectors in byte mode
Any combination of sectors can be concurrently erased. Also supports full chip erase
• Boot Code Sector Architecture
T = Top sector
B = Bottom sector
• Embedded EraseTM Algorithms
Automatically pre-programs and erases the chip or any sector
• Embedded ProgramTM Algorithms
Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode
• Low VCC write inhibit ≤ 2.5 V
• Erase Suspend/Resume
Suspends the erase operation to allow a read in another sector within the same device
(Continued)
Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.
1 page  
MBM29LV200TC-70/-90/-12/MBM29LV200BC-70/-90/-12
s PRODUCT LINE UP
Part No.
Ordering Part No.
VCC = 3.3 V
+0.3 V
–0.3 V
VCC = 3.0 V
+0.6 V
–0.3 V
Max. Address Access Time (ns)
Max. CE Access Time (ns)
Max. OE Access Time (ns)
s BLOCK DIAGRAM
MBM29LV200TC/MBM29LV200BC
-70 —
— -90
70 90
70 90
30 35
—
-12
120
120
50
V CC
V SS
WE
BYTE
RESET
CE
OE
RY/BY
Buffer
RY/BY
Erase Voltage
Generator
DQ 0 to DQ 15
Input/Output
Buffers
State
Control
Command
Register
Program Voltage
Generator
Chip Enable
Output Enable
Logic
STB Data Latch
A0 to A16
A-1
STB Y-Decoder
Low V CC Detector
Timer for
Program/Erase
Address
Latch
X-Decoder
Y-Gating
Cell Matrix
5
5 Page 
MBM29LV200TC-70/-90/-12/MBM29LV200BC-70/-90/-12
The manufacturer and device codes may also be read via the command register, for instances when the
MBM29LV200TC/BC are erased or programmed in a system without access to high voltage on the A9 pin. The
command sequence is illustrated in Table 7. (Refer to Autoselect Command section.)
Byte 0 (A0 = VIL) represents the manufacturer’s code (Fujitsu = 04H) and (A0 = VIH) represents the device identifier
code (MBM29LV200TC = 3BH and MBM29LV200BC = BFH for ×8 mode; MBM29LV200TC = 223BH and
MBM29LV200BC = 22BFH for ×16 mode). These two bytes/words are given in the tables 4.1 and 4.2. All identifiers
for manufactures and device will exhibit odd parity with DQ7 defined as the parity bit. In order to read the proper
device codes when executing the autoselect, A1 must be VIL. (See Tables 4.1 and 4.2.)
Table 4 .1 MBM29LV200TC/200BC Sector Protection Verify Autoselect Codes
Type
A12 to A16
A6
A1
A0 A-1*1 Code (HEX)
Manufacture’s Code
X VIL VIL VIL VIL 04H
Device Code
Byte
MBM29LV200TC
Word
Byte
MBM29LV200BC
Word
X
X
VIL 3BH
VIL VIL VIH
X 223BH
VIL BFH
VIL VIL VIH
X 22BFH
Sector Protection
Sector
Addresses
VIL
VIH
VIL
VIL
01H*2
*1: A-1 is for Byte mode.
*2: Outputs 01H at protected sector addresses and outputs 00H at unprotected sector addresses.
Table 4 .2 Expanded Autoselect Code Table
Type
Code DQ15 DQ14 DQ13 DQ12 DQ11 DQ10 DQ9 DQ8 DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ1 DQ0
Manufacturer’s Code
04H A-1/0 0 0 0 0 0 0 0 0 0 0 0 0 1 0 0
(B) 3BH A-1 HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z 0 0 1 1 1 0 1 1
MBM29LV200TC
Device
(W) 223BH 0 0 1 0 0 0 1 0 0 0 1 1 1 0 1 1
Code
(B) BFH A-1 HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z 1 0 1 1 1 1 1 1
MBM29LV200BC
(W) 22BFH 0 0 1 0 0 0 1 0 1 0 1 1 1 1 1 1
Sector Protection
01H A-1/0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1
(B): Byte mode
(W): Word mode
11
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet MBM29LV200BC-70.PDF ] | |
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