MBM29LV017-12 Datasheet PDF - Fujitsu
| Part Number | MBM29LV017-12 | |
| Description | 16M (2M x 8) BIT FLASH MEMORY | |
| Manufacturers | Fujitsu | |
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There is a preview and MBM29LV017-12 download ( pdf file ) link at the bottom of this page. Total 30 Pages | ||
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FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
16M (2M × 8) BIT
DS05-20857-4E
MBM29LV017-80/-90/-12
s FEATURES
• Address specification is not necessary during command sequence
• Single 3.0 V read, program and erase
Minimizes system level power requirements
• Compatible with JEDEC-standard commands
Uses same software commands as E2PROMs
• Compatible with JEDEC-standard world-wide pinouts
40-pin TSOP (I) (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type)
48-ball FBGA (Package suffix: PBT)
• Minimum 100,000 program/erase cycles
• High performance
80 ns maximum access time
• Sector erase architecture
Uniform sectors of 64K bytes each
Any combination of sectors can be concurrently erased. Also supports full chip erase
• Embedded EraseTM Algorithms
Automatically pre-programs and erases the chip or any sector
• Embedded programTM Algorithms
Automatically programs and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Automatic sleep mode
When addresses remain stable, automatically switches themselves to low power mode
• Low VCC write inhibit ≤ 2.5 V
• Hardware RESET pin
Resets internal state machine to the read mode
• Erase Suspend/Resume
Suspends the erase operation to allow a read data and/or program in another sector within the same device
• Sector protection
Hardware method disables any combination of sectors from program or erase operations
• Sector Protection set function by Extended sector protect command
• Temporary sector unprotection
Temporary sector unprotection via the RESET pin
• In accordance with CFI (Common Flash Memory Interface)
Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.
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s PRODUCT LINE UP
Part No.
Ordering Part No.
VCC
=
3.3
V
+0.3 V
–0.3 V
VCC
=
3.0
V
+0.6 V
–0.3 V
Max. Address Access Time (ns)
Max. CE Access Time (ns)
Max. OE Access Time (ns)
s BLOCK DIAGRAM
MBM29LV017-80/-90/-12
MBM29LV017
-80 —
—
— -90 -12
80 90 120
80 90 120
30 35 50
VCC
VSS
WE
RESET
CE
OE
RY/BY
Buffer
RY/BY
Erase Voltage
Generator
DQ0 to DQ7
Input/Output
Buffers
State
Control
Command
Register
Program Voltage
Generator
Chip Enable
Output Enable
Logic
STB Data Latch
A0 to A20
STB Y-Decoder
Low VCC Detector
Timer for
Program/Erase
Address
Latch
X-Decoder
Y-Gating
Cell Matrix
5
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for MBM29LV017-12 electronic component. |
| Information | Total 30 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ MBM29LV017-12.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| MBM29LV017-12 | The function is 16M (2M x 8) BIT FLASH MEMORY. Fujitsu | |
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