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What is MBM29LV004TC-70?

This electronic component, produced by the manufacturer "Fujitsu", performs the same function as "4M (512K x 8) BIT FLASH MEMORY".


MBM29LV004TC-70 Datasheet PDF - Fujitsu

Part Number MBM29LV004TC-70
Description 4M (512K x 8) BIT FLASH MEMORY
Manufacturers Fujitsu 
Logo Fujitsu Logo 


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Total 30 Pages



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FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
4M (512K × 8) BIT
DS05-20864-3E
MBM29LV004TC-70/-90/-12/MBM29LV004BC-70/-90/-12
s FEATURES
• Single 3.0 V read, program, and erase
Minimizes system level power requirements
• Compatible with JEDEC-standard commands
Uses same software commands as E2PROMs
• Compatible with JEDEC-standard world-wide pinouts
40-pin TSOP(I) (Package suffix: PTN – Normal Bend Type, PTR – Reversed Bend Type)
40-pin SON (Package suffix: PNS)
• Minimum 100,000 program/erase cycles
• High performance
70 ns maximum access time
• Sector erase architecture
One 16K byte, two 8K bytes, one 32K byte, and seven 64K bytes
Any combination of sectors can be concurrently erased. Also supports full chip erase
• Boot Code Sector Architecture
T = Top sector
B = Bottom sector
• Embedded EraseTM Algorithms
Automatically pre-programs and erases the chip or any sector
• Embedded ProgramTM Algorithms
Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode
• Low VCC write inhibit 2.5 V
• Erase Suspend/Resume
Suspends the erase operation to allow a read data in another sector within the same device
• Sector protection
Hardware method disables any combination of sectors from program or erase operations
• Sector Protection Set function by Extended sector protection command
• Temporary sector unprotection
Temporary sector unprotection via the RESET pin
Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.

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MBM29LV004TC-70 equivalent
MBM29LV004TC-70/-90/-12/MBM29LV004BC-70/-90/-12
s PRODUCT LINE UP
Part No.
Ordering Part No.
VCC = 3.3 V
+0.3 V
–0.3 V
VCC = 3.0 V
+0.6 V
–0.3 V
Max. Address Access Time (ns)
Max. CE Access Time (ns)
Max. OE Access Time (ns)
s BLOCK DIAGRAM
MBM29LV004TC/MBM29LV004BC
-70 — —
— -90 -12
70 90 120
70 90 120
30 35 50
VCC
VSS
WE
RESET
CE
OE
RY/BY
Buffer
RY/BY
Erase Voltage
Generator
DQ 0 to DQ 7
Input/Output
Buffers
State
Control
Command
Register
Program Voltage
Generator
Chip Enable
Output Enable
Logic
STB Data Latch
A0 to A18
STB Y-Decoder
Low VCC Detector
Timer for
Program/Erase
Address
Latch
X-Decoder
Y-Gating
Cell Matrix
5


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for MBM29LV004TC-70 electronic component.


Information Total 30 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
MBM29LV004TC-70The function is 4M (512K x 8) BIT FLASH MEMORY. FujitsuFujitsu

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