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PDF MBM29F800BA-90 Data sheet ( Hoja de datos )
| Número de pieza | MBM29F800BA-90 | |
| Descripción | 8M (1M x 8/512K x 16) BIT FLASH MEMORY | |
| Fabricantes | Fujitsu | |
| Logotipo |  |
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FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20841-4E
FLASH MEMORY
CMOS
8M (1M × 8/512K × 16) BIT
MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90
s FEATURES
www.DataSheet4U.com
• Single 5.0 V read, write, and erase
Minimizes system level power requirements
• Compatible with JEDEC-standard commands
Uses same software commands as E2PROMs
• Compatible with JEDEC-standard world-wide pinouts
48-pin TSOP(I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type)
44-pin SOP (Package suffix: PF)
• Minimum 100,000 write/erase cycles
• High performance
55 ns maximum access time
• Sector erase architecture
One 16K byte, two 8K bytes, one 32K byte, and fifteen 64K bytes.
Any combination of sectors can be concurrently erased. Also supports full chip erase.
• Boot Code Sector Architecture
T = Top sector
B = Bottom sector
• Embedded EraseTM Algorithms
Automatically pre-programs and erases the chip or any sector
• Embedded ProgramTM Algorithms
Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Low Vcc write inhibit ≤ 3.2 V
• Erase Suspend/Resume
Suspends the erase operation to allow a read data in another sector within the same device
• Hardware RESET pin
Resets internal state machine to the read mode
• Sector protection
Hardware method disables any combination of sectors from write or erase operations
• Temporary sector unprotection
Temporary sector unprotection via the RESET pin.
Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.
1 page  
MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90
s PRODUCT LINE UP
Part No.
Ordering Part No.
VCC = 5.0 V ± 5 %
VCC = 5.0 V ± 10 %
Max. Address Access Time (ns)
Max. CE Access Time (ns)
Max. OE Access Time (ns)
s BLOCK DIAGRAM
MBM29F800TA/MBM29F800BA
-55 — —
— -70 -90
55 70 90
55 70 90
30 30 40
VCC
VSS
WE
BYTE
RESET
CE
OE
RY/BY
Buffer
RY/BY
Erase Voltage
Generator
DQ0 to DQ15
Input/Output
Buffers
State
Control
Command
Register
Program Voltage
Generator
Chip Enable
Output Enable
Logic
STB Data Latch
A0 to A18
A-1
STB Y-Decoder
Low VCC Detector
Timer for
Program/Erase
Address
Latch
X-Decoder
Y-Gating
Cell Matrix
5
5 Page 
MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90
Table 4 .1 MBM29F800TA/BA Sector Protection Verify Autoselect Codes
Type
A12 to A18
A6
A1
A0 A-1*1
Manufacture’s Code
X VIL VIL VIL VIL
Device Code
Byte
MBM29F800TA
Word
Byte
MBM29F800BA
Word
X
X
VIL
VIL VIL VIH
X
VIL
VIL VIL VIH
X
Sector Protection
Sector
Addresses
VIL
VIH
VIL
VIL
*1: A-1 is for Byte mode.
*2: Outputs 01H at protected sector addresses and outputs 00H at unprotected sector addresses.
Code
(HEX)
04H
D6H
22D6H
58H
2258H
01H*2
Table 4 .2 Expanded Autoselect Code Table
Type
Code DQ15 DQ14 DQ13 DQ12 DQ11 DQ10 DQ9 DQ8 DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ1 DQ0
Manufacture’s Code
04H A-1/0 0 0 0 0 0 0 0 0 0 0 0 0 1 0 0
Device
Code
(B) D6H A-1 HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z 1 1 0 1 0 1 1 0
MBM29F800TA
(W) 22D6H 0 0 1 0 0 0 1 0 1 1 0 1 0 1 1 0
(B) 58H A-1 HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z 0 1 0 1 1 0 0 0
MBM29F800BA
(W) 2258H 0 0 1 0 0 0 1 0 0 1 0 1 1 0 0 0
Sector Protection
01H A-1/0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1
(B): Byte mode
(W): Word mode
Write
Device erasure and programming are accomplished via the command register. The contents of the register serve
as inputs to the internal state machine. The state machine outputs dictate the function of the device.
The command register itself does not occupy any addressable memory location. The register is a latch used to
store the commands, along with the address and data information needed to execute the command. The
command register is written by bringing WE to VIL, while CE is at VIL and OE is at VIH. Addresses are latched on
the falling edge of WE or CE, whichever happens later; while data is latched on the rising edge of WE or CE,
whichever happens first. Standard microprocessor write timings are used.
Refer to AC Write Characteristics and the Erase/Programming Waveforms for specific timing parameters.
Sector Protection
The MBM29F800TA/BA features hardware sector protection. This feature will disable both program and erase
operations in any number of sectors (0 through 18). The sector protection feature is enabled using programming
equipment at the user’s site. The device is shipped with all sectors unprotected.
11
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| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet MBM29F800BA-90.PDF ] | |
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