|
|
PDF MBM29F017A-12 Data sheet ( Hoja de datos )
| Número de pieza | MBM29F017A-12 | |
| Descripción | 16M (2M x 8) BIT FLASH MEMORY | |
| Fabricantes | Fujitsu | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MBM29F017A-12 (archivo pdf) en la parte inferior de esta página. Total 30 Páginas | ||
|
No Preview Available !
FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
16M (2M × 8) BIT
DS05-20843-3E
MBM29F017A-70/-90/-12
s FEATURES
• Single 5.0 V read, write, and erase
Minimizes system level power requirements
• Compatible with JEDEC-standard commands
Pinout and software compatible with single-power supply Flash
Superior inadvertent write protection
• 48-pin TSOP, 40-pin SON
• Minimum 100,000 write/erase cycles
• High performance
70 ns maximum access time
• Sector erase architecture
Uniform sectors of 64K bytes each
Any combination of sectors can be erased. Also supports full chip erase
• Embedded EraseTM Algorithms
Automatically pre-programs and erases the chip or any sector
• Embedded ProgramTM Algorithms
Automatically programs and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/BUSY output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Low VCC write inhibit ≤ 3.2 V
• Hardware RESET pin
Resets internal state machine to the read mode
• Erase Suspend/Resume
Supports reading or programming data to a sector not being erased
• Sector group protection
Hardware method that disables any combination of sector groups from write or erase operation (a sector group
consists of 4 adjacent sectors of 64K bytes each)
• Temporary sector groups unprotection
Hardware method temporarily enable any combination of sectors from write or erase operations
Embedded Erase™, Embedded Program™ and ExpressFlash™ are trademarks of Advanced Micro Devices, Inc.
1 page  
s PRODUCT LINE UP
Part No.
Ordering Part No.
VCC = 5.0 V ±5%
VCC = 5.0 V ±10%
Max. Address Access Time (ns)
Max. CE Access Time (ns)
Max. OE Access Time (ns)
s BLOCK DIAGRAM
MBM29F017A-70/-90/-12
MBM29F017A
-70 —
—
— -90 -12
70 90 120
70 90 120
40 40 50
VCC
VSS
WE
RESET
CE
OE
RY/BY
Buffer
RY/BY
Erase Voltage
Generator
DQ0 to DQ7
Input/Output
Buffers
State
Control
Command
Register
Program Voltage
Generator
Chip Enable
Output Enable
Logic
STB Data Latch
A0 to A20
STB Y-Decoder
Low VCC Detector
Timer for
Program/Erase
Address
Latch
X-Decoder
Y-Gating
Cell Matrix
5
5 Page 
MBM29F017A-70/-90/-12
The Autoselect mode also facilitates the determination of sector group protection in the system. By performing
a read operation at the address location XX02H with the higher order address bits A18, A19, and A20 set to the
desired sector group address, the device will return 01H for a protected sector group and 00H for a non-protected
sector group.
Type
Manufacture’s
Code
Device Code
Sector Group
Protection
Table 3 MBM29F017A Sector Protection Verify Autoselect Codes
A18 to A20
A6
A1
A0
Code
(HEX)
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
X X X VIL VIL VIL 04H 0 0 0 0 0 1 0 0
X X X VIL VIL VIH 3DH 0 0 1 1 1 1 0 1
Sector Group
Addresses
VIL VIH VIL 01H*
0
0
0
0
0
0
0
1
* : Outputs 01H at protected sector addresses and outputs 00H at unprotected sector addresses.
11
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet MBM29F017A-12.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MBM29F017A-12 | 16M (2M x 8) BIT FLASH MEMORY | Fujitsu |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |