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Número de pieza | MBM29F004BC-90 | |
Descripción | FLASH MEMORY CMOS 4M (512K x 8) BIT | |
Fabricantes | Fujitsu | |
Logotipo | ||
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FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20876-3E
FLASH MEMORY
CMOS
4 M (512 K × 8) BIT
MBM29F004TC/004BC-70/-90
s DESCRIPTION
The MBM29F004TC/BC is a 4 M-bit, 5.0 V-Only Flash memory organized as 512 K bytes of 8 bits each. The
MBM29F004TC/BC is offered in a 32-pin TSOP (1) and 32-pin QFJ (PLCC) packages. This device is designed
to be programmed in-system with the standard system 5.0 V VCC supply. A 12.0 V VPP is not required for write or
erase operations. The device can also be reprogrammed in standard EPROM programmers.
The standard MBM29F004TC/BC offers access times between 70 ns and 90 ns allowing operation of high-speed
microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE) , write
enable (WE) , and output enable (OE) controls.
The MBM29F004TC/BC is pin and command set compatible with JEDEC standard E2PROMs. Commands are
written to the command register using standard microprocessor write timings. Register contents serve as input
to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch
addresses and data needed for the programming and erase operations. Reading data out of the device is similar
to reading from 12.0 V Flash or EPROM devices.
(Continued)
s PRODUCT LINE UP
Part No.
Ambient Temperature ( °C)
Max Address Access Time (ns)
VCC Supply Voltage
Operation
Voltage Consumption Erase/Program
(mW) (Max) TTL Standby mode
CMOS Standby mode
Max CE Access (ns)
Max OE Access (ns)
MBM29F004TC/BC
-70 -90
−20 to + 70
−40 to + 85
70 90
5.0 V ± 10%
193
275
5.5
0.0275
70 90
30 35
1 page MBM29F004TC/004BC-70/90
(Continued)
PLCC
(TOP VIEW)
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
4 3 2 1 32 31 30
5 29
6 28
7 27
8 26
9 25
10 24
11 23
12 22
13 21
14 15 16 17 18 19 20
A14
A13
A8
A9
A11
OE
A10
CE
DQ7
(LCC-32P-M02)
s PIN DESCRIPTION
Table 1 MBM29F004TC/BC Pin Configuration
Pin
A18 to A0
DQ7 to DQ0
CE
OE
WE
VSS
VCC
Function
Address Inputs
Data Inputs/Outputs
Chip Enable
Output Enable
Write Enable/Sector Protection Unlock
Device Ground
Device Power Supply (5.0 V±10%)
5
5 Page Sector
SA0
SA1
SA2
SA3
SA4
SA5
SA6
SA7
SA8
SA9
SA10
Sector
SA0
SA1
SA2
SA3
SA4
SA5
SA6
SA7
SA8
SA9
SA10
MBM29F004TC/004BC-70/90
Sector Size
64 K bytes
64 K bytes
64 K bytes
64 K bytes
64 K bytes
64 K bytes
64 K bytes
32 K bytes
8 K bytes
8 K bytes
16 K bytes
(×8) Address Range
00000h to 0FFFFh
10000h to 1FFFFh
20000h to 2FFFFh
30000h to 3FFFFh
40000h to 4FFFFh
50000h to 5FFFFh
60000h to 6FFFFh
70000h to 77FFFh
78000h to 79FFFh
7A000h to 7BFFFh
7C000h to 7FFFFh
MBM29F004TC Top Boot Sector Architecture
Sector Size
16 K bytes
8 K bytes
8 K bytes
32 K bytes
64 K bytes
64 K bytes
64 K bytes
64 K bytes
64 K bytes
64 K bytes
64 K bytes
(×8) Address Range
00000h to 03FFFh
04000h to 05FFFh
06000h to 07FFFh
08000h to 0FFFFh
10000h to 1FFFFh
20000h to 2FFFFh
30000h to 3FFFFh
40000h to 4FFFFh
50000h to 5FFFFh
60000h to 6FFFFh
70000h to 7FFFFh
MBM29F004BC Bottom Boot Sector Architecture
11
11 Page |
Páginas | Total 30 Páginas | |
PDF Descargar | [ Datasheet MBM29F004BC-90.PDF ] |
Número de pieza | Descripción | Fabricantes |
MBM29F004BC-90 | FLASH MEMORY CMOS 4M (512K x 8) BIT | Fujitsu |
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