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What is MBM29F002TC-70?

This electronic component, produced by the manufacturer "Fujitsu", performs the same function as "2M (256K x 8) BIT FLASH MEMORY".


MBM29F002TC-70 Datasheet PDF - Fujitsu

Part Number MBM29F002TC-70
Description 2M (256K x 8) BIT FLASH MEMORY
Manufacturers Fujitsu 
Logo Fujitsu Logo 


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Total 30 Pages



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FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
2M (256K × 8) BIT
DS05-20868-3E
MBM29F002TC-55/-70/-90/MBM29F002BC-55/-70/-90
s FEATURES
• Single 5.0 V read, write, and erase
Minimizes system level power requirements
• Compatible with JEDEC-standard commands
Pinout and software compatible with single-power supply Flash
Superior inadvertent write protection
• 32-pin TSOP(I) (Package Suffix: PFTN-Normal Bend Type, PFTR-Reverse Bend Type)
32-pin PLCC (Package Suffix: PD)
• Minimum 100,000 write/erase cycles
• High performance
55 ns maximum access time
• Sector erase architecture
One 16K byte, two 8K bytes, one 32K byte, and three 64K bytes
Any combination of sectors can be erased. Also supports full chip erase
• Boot Code Sector Architecture
T = Top sector
B = Bottom sector
• Embedded Erase™ Algorithms
Automatically pre-programs and erases the chip or any sector
• Embedded Program™ Algorithms
Automatically programs and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Low VCC write inhibit 3.2 V
• Hardware RESET pin
Resets internal state machine to the read mode
• Erase Suspend/Resume
Supports reading or programming data to a sector not being erased
• Sector protection
Hardware method that disables any combination of sector from write or erase operation
• Temporary sector unprotection
Temporary sector unprotection via the RESET pin
Embedded Erase™, Embedded Program™ and ExpressFlash™ are trademarks of Advanced Micro Devices, Inc.

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MBM29F002TC-70 equivalent
MBM29F002TC-55/-70/-90/MBM29F002BC-55/-70/-90
s PRODUCT LINE UP
Part No.
MBM29F002TC/BC
VCC = 5.0 V ± 5%
-55
Ordering Part No.
VCC = 5.0 V ± 10%
-70
-90
Max. Address Access Time (ns) 55 70 90
Max. CE Access Time (ns)
55 70 90
Max. OE Access Time (ns)
30 30 35
s BLOCK DIAGRAM
VCC
VSS
WE
RESET
CE
OE
DQ0 to DQ7
Erase Voltage
Generator
Input/Output
Buffers
State
Control
Command
Register
Program Voltage
Generator
Chip Enable
Output Enable
Logic
STB Data Latch
A0 to A17
STB Y-Decoder
Low VCC Detector
Timer for
Program/Erase
Address
Latch
X-Decoder
Y-Gating
Cell Matrix
5


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for MBM29F002TC-70 electronic component.


Information Total 30 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
MBM29F002TC-70The function is 2M (256K x 8) BIT FLASH MEMORY. FujitsuFujitsu

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