MBM29PL160TD-90 Datasheet PDF - Fujitsu
| Part Number | MBM29PL160TD-90 | |
| Description | 16M (2M x 8/1M x 16) BIT FLASH MEMORY | |
| Manufacturers | Fujitsu | |
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There is a preview and MBM29PL160TD-90 download ( pdf file ) link at the bottom of this page. Total 30 Pages | ||
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FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20872-1E
PAGE MODE FLASH MEMORY
CMOS
16M (2M × 8/1M × 16) BIT
MBM29PL160TD-75/-90/MBM29PL160BD-75/-90
s FEATURES
• Single 3.0 V read, program and erase
Minimizes system level power requirements
• Compatible with JEDEC-standard commands
Uses same software commands as E2PROMs
• Compatible with MASK ROM pinouts
48-pin TSOP (I) (Package suffix: PFTN-Normal Bend Type, PFTR-Reversed Bend Type)
44-pin SOP (Package suffix: PF)
• Minimum 100,000 program/erase cycles
• High performance
25 ns maximum page access time (75ns maximum random access time)
• An 8 words page read mode function
• Sector erase architecture
One 8K word, two 4K words, one 112K word, and seven 128K words sectors in word mode
One 16K byte, two 8K bytes, one 224K byte, and seven 256K bytes sectors in byte mode
Any combination of sectors can be concurrently erased. Also supports full chip erase
• Boot Code Sector Architecture
T = Top sector
B = Bottom sector
• Embedded EraseTM Algorithms
Automatically pre-programs and erases the chip or any sector
• Embedded programTM Algorithms
Automatically programs and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Automatic sleep mode
When addresses remain stable, automatically switches themselves to low power mode
• Low VCC write inhibit ≤ 2.5 V
(Continued)
Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.
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MBM29PL160TD-75/-90/MBM29PL160BD-75/-90
s PRODUCT LINE UP
Part No.
Ordering Part No.
VCC
=
3.0
V
+0.6 V
–0.3 V
Max. Address Access Time (ns)
Max. Page Address Access Time (ns)
Max. CE Access Time (ns)
Max. OE Access Time (ns)
s BLOCK DIAGRAM
MBM29PL160TD/160BD
-75 -90
75 90
25 35
75 90
25 35
VCC
VSS
WE
BYTE
CE
OE
DQ0 to DQ15
Erase Voltage
Generator
Input/Output
Buffers
State
Control
Command
Register
Program Voltage
Generator
Chip Enable
Output Enable
Logic
STB Data Latch
A0 to A19
A-1
STB Y-Decoder
Low VCC Detector
Timer for
Program/Erase
Address
Latch
X-Decoder
Y-Gating
Cell Matrix
5
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for MBM29PL160TD-90 electronic component. |
| Information | Total 30 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ MBM29PL160TD-90.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| MBM29PL160TD-90 | The function is 16M (2M x 8/1M x 16) BIT FLASH MEMORY. Fujitsu | |
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