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PDF TIP120 Data sheet ( Hoja de datos )
| Número de pieza | TIP120 | |
| Descripción | NPN Epitaxial Darlington Transistors | |
| Fabricantes | MCC | |
| Logotipo |  |
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 1. Complementary Darlington Transistor - ST  Hay una vista previa y un enlace de descarga de TIP120 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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MCC
TM
Micro Commercial Components
omponents
20736 Marilla Street Chatsworth
!"#
$
% !"#
TIP120
Features
• Low collector-emitter saturation voltage
• Amplifier applications -emitter shunt resistors
• TO-220 compact package
• Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
Maximum Ratings@ Ta=25OC Unless Otherwise Specified
Symbol
Rating
Rating
Unit
VCEO Collector-Emitter Voltage
60 V
VCBO Colector-Base Voltage
60 V
VEBO
Emitter-Base Voltage
5.0 V
ICP Peak Collector Current
8.0 A
IC
PC
TJ
TSTG
RthJC
RthJA
Collector Current
Collector power dissipation(Tc=25OC)
Junction Temperature
Storage Temperature
Thermal Resistence, Junction to case
Thermal Resistence, Junction to ambient
5.0
65
-55 to +150
-55 to +150
1.92
62.5
A
W
OC
OC
OC/W
OC/W
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
OFF CHARACTERISTICS
Min Max Units
V(BR)CEO Collector-Emitter Breakdown Voltage
(I C=100mAdc, IB=0)
ICBO Collector-Base Cutoff Current
(V CB=60Vdc,IE=0)
IEBO Emitter-Base Cutoff Current
(V EB=5.0Vdc, IC=0)
ICEO Collector-Emitter Cutoff Current
(V CE=30Vdc, IB=0)
ON CHARACTERISTICS
60
---
---
---
--- Vdc
0.2 mAdc
2.0 mAdc
0.5 mAdc
hFE-1
hFE-2
V CE(sat)-1
V CE(sat)-2
V BE(on)
Forward Current Transfer Ratio
(I C=0.5Adc, VCE=3.0Vdc)
Forward Current Transfer Ratio
(I C=3.0Adc, VCE=3.0Vdc)
Collector-Emitter Saturation Voltage
(I C=3.0Adc, IB=12mAdc)
Collector-Emitter Saturation Voltage
(I C=5.0Adc, IB=20mAdc)
Base-Emitter On Voltage
(I C=3.0Adc, VCE=3.0Adc)
1000
1000
---
---
---
---
---
2.0 Vdc
4.0 Vdc
2.5 Vdc
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.
NPN Epitaxial
Darlington Transistors
TO-220
B
F
C
S
Q
A
12 3
H
T
U
K
V
LJ
G
N
D
PIN 1.
PIN 2.
BASE
COLLECTOR
R
PIN 3.
EMITTER
DIMENSIONS
INCHES
MM
DIM MIN MAX
MIN
MAX
NOTE
A .560 .625 14.22 15.88
B .380 .420 9.65 10.67
C .140 .190 3.56
4.82
D .020 .045 0.51
1.14
F
.139 .161
3.53
4.09 ∅
G .190 .110 2.29
H --- .250 ---
J
.012 .025
0.30
2.79
6.35
0.64
K .500 .580 12.70 14.73
L
.045 .060
1.14
1.52
N .190 .210 4.83
5.33
Q .100 .135 2.54
3.43
R .080 .115 2.04
S .045 .055 1.14
2.92
1.39
T
.230 .270
5.84
6.86
U ----- .050 -----
V .045 ----- 1.15
1.27
-----
Revision: A
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1 of 2
2011/01/01
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet TIP120.PDF ] | |
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