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TIP116 fiches techniques PDF

MCC - PNP Epitaxial Silicon Darlington Transistors

Numéro de référence TIP116
Description PNP Epitaxial Silicon Darlington Transistors
Fabricant MCC 
Logo MCC 





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TIP116 fiche technique
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
Features
High DC Current Gain : hFE=1000 @ VCE=4.0V, IC=1.0A(Min.)
Low Collector-Emitter Saturation Voltage
Complementary to TIP110/111/112
Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
MaMxiomisuurme SReantsiitnivgitsy Level 1
Symbol
Rating
VCEO Collector-Emitter Voltage
TIP115
TIP116
TIP117
Rating
60
80
100
Unit
V
VCBO Collector-Base Voltage
TIP115
TIP116
TIP117
60
80
100
V
VEBO
Emitter-Base Voltage
5.0 V
IC Collector Current (DC)
2.0 A
ICP Collector Current (Pulse)
4.0 A
IB Base Current (DC)
50 mA
PC
Collector Dissipation @TA=25OC
Collector Dissipation @TC=25OC
2.0 W
50 W
TJ,
TSTG
Junction Temperature
Storage Temperature
-55 to +150
-55 to +150
OC
OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbl
Parameter
OFF CHARACTERISTICS
Min Max Units
VCEO(SUS) Collector-Emitter Sustaining Voltage
(I C=30mAdc, IB=0)
TIP115 60
---
TIP116 80 --- Vdc
TIP117 100
---
ICEO Collector Cut-off Current
(V CE=30Vdc, IB=0)
(VCE=40Vdc, IB=0)
(VCE=50Vdc, IB=0)
ICBO Collector Cut-off Current
(V CB=60Vdc, IE=0)
(V CB=80Vdc, IE=0)
(V CB=100Vdc, IE=0)
IEBO Emitter Cut-off Current
(VBE=5.0Vdc, IC=0)
ON CHARACTERISTICS
TIP115
TIP116
TIP117
TIP115
TIP116
TIP117
---
---
---
---
---
---
---
2.0
2.0
mAdc
2.0
1.0
1.0
mAdc
1.0
2.0 mAdc
hFE(1)
V CE(sat)
V BE(ON)
Cob
DC Current Gain
(I C=1.0Adc, VCE=4.0Vdc)
(IC=2.0Adc, VCE=4.0Vdc)
Collector-Emitter Saturation Voltage
(IC=2.0Adc, IB=8.0mAdc)
Base-Emitter On Voltage
(I C=2.0Adc,VCE=4.0Adc)
Output Capacitance
(V CB=10V, IE=0, f=0.1MH z)
1000
---
----
500 ---
--- 2.5 Vdc
--- 2.8 Vdc
--- 200
pF
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.
TIP115
TIP116
TIP117
PNP Epitaxial
Silicon Darlington
Transistors
TO-220
B
F
C
S
Q
T
A
U
H
K
V
LJ
D
G
N
Equivalent Circuit
C
R
B
1.Base
2.Collector
3.Emitter
R1 R2
R1 10k
R2 0.6k
E


INCHES
MM
 
  
A
.595
.620
15.11 15.75
B
.380
.405
9.65
10.29
C
.160
.190
4.06
4.82
D
.025
.035
0.64
0.89
F
.142
.147
3.61
3.73
G
.190
.210
4.83
5.33
H
.110
.130
2.79
3.30
J
.018
.025
0.46
0.64
K
.500
.562
12.70
14.27
L
.045
.060
1.14
1.52
Q .100
.120
2.54
3.04
R
.080
.110
2.04
2.79
S
.045
.055
1.14
1.39
T
.235
.255
5.97
6.48
U
------
.050
-----
1.27
 
Revision: A
www.mccsemi.com
1 of 1
2011/01/01

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