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BD908 fiches techniques PDF

INCHANGE - Silicon PNP Power Transistor

Numéro de référence BD908
Description Silicon PNP Power Transistor
Fabricant INCHANGE 
Logo INCHANGE 





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BD908 fiche technique
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD908
DESCRIPTION
·DC Current Gain -
: hFE = 40@ IC= -0.5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -60V(Min)
·Complement to Type BD907
APPLICATIONS
·Designed for use in general purpose power amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
-60
VCEO
Collector-Emitter Voltage
-60
VEBO
Emitter-Base Voltage
-5
IC Collector Current-Continuous
-15
ICM Collector Current-Peak
-20
IBB Base Current
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
-5
90
150
Tstg Storage Temperature Range
-65~150
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.38 /W
isc Websitewww.iscsemi.cn

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