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Numéro de référence | BD908 | ||
Description | Silicon PNP Power Transistor | ||
Fabricant | INCHANGE | ||
Logo | |||
1 Page
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD908
DESCRIPTION
·DC Current Gain -
: hFE = 40@ IC= -0.5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -60V(Min)
·Complement to Type BD907
APPLICATIONS
·Designed for use in general purpose power amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
-60
VCEO
Collector-Emitter Voltage
-60
VEBO
Emitter-Base Voltage
-5
IC Collector Current-Continuous
-15
ICM Collector Current-Peak
-20
IBB Base Current
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
-5
90
150
Tstg Storage Temperature Range
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.38 ℃/W
isc Website:www.iscsemi.cn
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Pages | Pages 2 | ||
Télécharger | [ BD908 ] |
No | Description détaillée | Fabricant |
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