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PDF BD906 Data sheet ( Hoja de datos )
| Número de pieza | BD906 | |
| Descripción | Silicon PNP Power Transistor | |
| Fabricantes | INCHANGE | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BD906 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD906
DESCRIPTION
·DC Current Gain -
: hFE = 40(Min.)@ IC= -0.5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -45V(Min)
·Complement to Type BD905
APPLICATIONS
·Designed for use in general purpose power amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
-45
VCEO
Collector-Emitter Voltage
-45
VEBO
Emitter-Base Voltage
-5
IC Collector Current-Continuous
-15
ICM Collector Current-Peak
-20
IBB Base Current
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
-5
90
150
Tstg Storage Temperature Range
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.38 ℃/W
isc Website：www.iscsemi.cn
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BD906.PDF ] | |
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