DataSheetWiki


BD241B fiches techniques PDF

Bourns - NPN SILICON POWER TRANSISTORS

Numéro de référence BD241B
Description NPN SILICON POWER TRANSISTORS
Fabricant Bourns 
Logo Bourns 





1 Page

No Preview Available !





BD241B fiche technique
BD241, BD241A, BD241B, BD241C
NPN SILICON POWER TRANSISTORS
Designed for Complementary Use with the
BD242 Series
40 W at 25°C Case Temperature
3 A Continuous Collector Current
5 A Peak Collector Current
Customer-Specified Selections Available
TO-220 PACKAGE
(TOP VIEW)
B1
C2
E3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-emitter voltage (RBE = 100 )
Collector-emitter voltage (IC = 30 mA)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
BD241
BD241A
BD241B
BD241C
BD241
BD241A
BD241B
BD241C
VCER
VCEO
VEBO
IC
ICM
IB
Ptot
Ptot
½LIC2
Tj
Tstg
TL
55
70
90
115
45
60
80
100
5
3
5
1
40
2
32
-65 to +150
-65 to +150
250
V
V
V
A
A
A
W
W
mJ
°C
°C
°C
NOTES: 1. This value applies for tp 0.3 ms, duty cycle 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 ,
VBE(off) = 0, RS = 0.1 , VCC = 20 V.
PRODUCT INFORMATION
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1

PagesPages 5
Télécharger [ BD241B ]


Fiche technique recommandé

No Description détaillée Fabricant
BD241 POWER TRANSISTORS(3A/40W) Mospec Semiconductor
Mospec Semiconductor
BD241 NPN SILICON POWER TRANSISTORS Power Innovations Limited
Power Innovations Limited
BD241 NPN SILICON POWER TRANSISTOR TRSYS
TRSYS
BD241 Medium Power Linear and Switching Applications Fairchild Semiconductor
Fairchild Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche