DataSheetWiki


2N5296 fiches techniques PDF

CDIL - NPN PLASTIC POWER TRANSISTOR

Numéro de référence 2N5296
Description NPN PLASTIC POWER TRANSISTOR
Fabricant CDIL 
Logo CDIL 





1 Page

No Preview Available !





2N5296 fiche technique
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
TO-220 Plastic Package
2N5294, 2N5296, 2N5298
2N5294, 5296, 5298
NPN PLASTIC POWER TRANSISTORS
Medium Power Switching and Amplifier Applications
BF
C
E
12 3
D
G
J
M
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current
Total power dissipation up to TC = 25°C
Junction temperature
Collector-emitter saturation voltage
IC = 0.5 A; IB = 0.05 A
IC = 1 A; IB = 0.1 A
IC = 1.5 A; IB = 0.15 A
D.C. current gain
IC = 0.5 A; VCE = 4 V
IC = 1 A; VCE = 4 V
IC = 1.5 A; VCE = 4 V
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
1
2
3
DIM MIN . MAX.
A 14.42 16.51
B 9.63 10.67
C 3.56 4.83
D 0.90
E 1.15 1.40
F 3.75 3.88
G 2.29 2.79
H 2.54 3.43
J 0.56
K 12.70 14.73
L 2.80 4.07
M 2.03 2.92
N 31.24
O DEG 7
4
VCBO
VCEO
IC
Ptot
Tj
5294 5296 5298
max. 80 60 80 V
max. 70 40 60 V
max.
4.0 A
max.
36 W
max.
150 °C
VCEsat max. 1.0 – – V
– 1.0 – V
– – 1.0 V
hFE
hFE*
hFE*
min. 30 –
max. 120 –
min. – 30
max. – 120
min. –
max. –
20
80
Continental Device India Limited
Data Sheet
Page 1 of 4

PagesPages 4
Télécharger [ 2N5296 ]


Fiche technique recommandé

No Description détaillée Fabricant
2N5290 Trans GP BJT PNP 100V 10A 3-Pin TO-61 New Jersey Semiconductor
New Jersey Semiconductor
2N5290 PNP Transistor SSDI
SSDI
2N5291 PNP Transistor SSDI
SSDI
2N5291 Trans GP BJT PNP 100V 10A 3-Pin TO-61 New Jersey Semiconductor
New Jersey Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche