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SHINDENGEN - Schottky Barrier Diode

Numéro de référence D1FT4A
Description Schottky Barrier Diode
Fabricant SHINDENGEN 
Logo SHINDENGEN 





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D1FT4A fiche technique
Single
Schottky Barrier Diode
D1FT4A
OUTLINE
Package 1F
40V 3A
Unit : mm
Feature
RATINGS
Absolute Maximum Ratings
For details of the outline dimensions, refer to our web site. As for the
marking, refer to the specification “Marking, Terminal Connection”.
l
Item
Storage Temperature
Operating Junction Temperature
Maximum Reverse Voltage
Average Rectified Forward Current
Peak Surge Forward Current
Symbol
Conditions
Tstg
Tj
VRM
Io
IFSM
50Hz sine wave, Resistance load
l
On glass-epoxy substrate
On alumina substrate
50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25
Ratings
Unit
Forward Voltage
Reverse Current
Junction Capacitance
Thermal Resistance
Electrical Characteristics
l
Pulse measurement
VF
Pulse measurement
IR Pulse measurement
Cj
θjl Junction to lead
θja Junction to ambient
On alumina substrate
On glass-epoxy substrate
www.shindengen.co.jp/product/semi/

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