(PDF) S1NBB80 Datasheet

Número de pieza	S1NBB80
Descripción	Bridge Diode
Fabricantes	SHINDENGEN
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No Preview Available ! SMD/DIP S1NBB80 800V 1A I I Bridge Diode OUTLINE Package 1NA SMD S1NBB 8000 Package 1NA DIP SINBB 8000 RRAATTININGGSS Absolute Maximum Ratings Item Storage Temperature Operation Junction Temperature Maximum Reverse Voltage Symbol Conditions For details of outline dimensions, refer to our web site or the Semiconductor Terminal Connection.” l Type No. S1NBB80 Unit Average Rectified Forward Current 50Hz sine wave, Resistance load Peak Surge Forward Current Current Squared Time 50Hz sine wave, Non-repetitive 1cycle peak value, Tj = 25 per diode Forward Voltage Reverse Current Thermal Resistance Electrical Characteristics l Pulse measurement, per diode Pulse measurement, per diode l Junction to Lead Junction to Ambient On glass-epoxy substrate, copper soldering pad area 324mm2 On glass-epoxy substrate, copper soldering pad area 101mm2 J534-p 2014.03 1 page

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PDF S1NBB80 Data sheet ( Hoja de datos )