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TT - N-Channel Enhancement Mode MOS Transistor

Numéro de référence HCT70000MTX
Description N-Channel Enhancement Mode MOS Transistor
Fabricant TT 
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HCT70000MTX fiche technique
N-Channel Enhancement
Mode MOS Transistor
HCT7000M, HCT70000MTX, HCT7000MTXV
Features:
 200 mA ID
 Ultra small surface mount package
 RDS(ON) < 5Ω
 Pin-out compatible with most SOT23 MOSFETS
Description:
The HCT7000M is a high performance enhancement mode Nchannel MOS transistor chip packaged in the ultra small 3 pin 
ceramic LCC package. Electrical characteris cs are similar to those of the JEDEC 2N7000.  The pinout and footprint matches 
that of most enhancement mode MOS transistors built in SOT23 plas c packages. 
 
TX and TXV devices are processed to OPTEK’s military screening program pa erned a er MILPRF19500. 
TX products receive a VGS HTRB at 24 V for 48 hrs. at 150° C and a VDS HTRB at 48 V for 260 hrs.at 150° C. 
 
Applications:
 Switching applications:
small servo motor
control, power MOSFET
gate drives
 Relay Drivers
 High Speed Line
Drivers
 Power Supplies
 
Part 
Number 
Sensor Type 
HCT7000M 
HCT7000MTX 
HCT7000MTXV 
NChannel 
Enhanced  
MOSFET 
VDSS  VGS(TH) Min/ ID(ON) (mA)  Gfs (ms)  t(ON) / t(OFF) (ns) 
Min  Max 
Min  Min 
Max 
Package 
60  0.8 / 3.0 
75 
100  10 / 10  3pin Ceramic 
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue A 11/2016 Page 1

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