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PDF HCT802 Data sheet ( Hoja de datos )
| Número de pieza | HCT802 | |
| Descripción | Dual Enhancement Mode MOSFET | |
| Fabricantes | TT | |
| Logotipo |  |
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Dual Enhancement Mode
MOSFET
HCT802, HCT802TX, HCT802TXV
Features:
6 pad surface mount package
VDS = 90V
RDS(on) < 5Ω
ID(on) N-Channel = 1.5A | P-Channel = 1.1A
Two devices selected for VDS ID(on) and RDS(on) similarity
Full TX Processing Available
Gold plated contacts
Description:
HCT802 offers an N‐Channel and P‐Channel MOS transistor in a herme c ceramic surface mount package. The devices used
are similar to industry standards 2N6661 N‐Channel device and VP1008 P‐Channel device. These two enhancement mode
MOSFETS are par cularly well matched for VDS, IDS(on), RDS(on) and Gfs.
TX and TXV devices are processed to OPTEK’s military screening program pa erned a er MIL‐PRF‐19500.
TX products receive a VGS HTRB at 24 V for 48 hrs. at 150° C and a VDS HTRB at 48 V for 260 hrs.at 150° C.
Applications:
Drivers: Solid State
Relays, Lamps,
Solenoids, Displays,
Memories, etc.
Motor Control
Power Supply
Circuits
Part
Number
Sensor Type
VDSS ID(ON) (mA)
Min Min
Gfs (ms)
Min
HCT801 N & P ‐Channel
HCT801TX Enhancement 90 1.5 & ‐1.1 170 & 200
HCT801TXV
MOSFET
t(ON) / t(OFF) (ns)
Max
Package
15/17 & 50/50 6‐pin Ceramic
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue A 11/2016 Page 1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet HCT802.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HCT802 | Dual En hance ment Mode MOS FET |  OPTEK |
| HCT802 | Dual Enhancement Mode MOSFET | TT |
| HCT802TX | Dual Enhancement Mode MOSFET | TT |
| HCT802TX | Dual En hance ment Mode MOS FET | OPTEK |
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