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CCLHM120 fiches techniques PDF

Central Semiconductor Corp - SURFACE MOUNT HIGH CURRENT CURRENT LIMITING DIODE

Numéro de référence CCLHM120
Description SURFACE MOUNT HIGH CURRENT CURRENT LIMITING DIODE
Fabricant Central Semiconductor Corp 
Logo Central Semiconductor Corp 





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CCLHM120 fiche technique
CCLHM080
THRU
CCLHM150
SURFACE MOUNT
HIGH CURRENT
CURRENT LIMITING DIODE
SOD-80
SOD-80 CASE
DESCRIPTION:
CentralTM
Semiconductor Corp.
FEATURES:
LOW COST
SUPERIOR LOT TO LOT CONSISTENCY
HIGH RELIABILITY
LEADED DEVICES AVAILABLE
SPECIAL SELECTIONS AVAILABLE
The CENTRAL SEMICONDUCTOR CCLHM080 series types are high current silicon field effect current
regulator diodes designed for applications requiring a constant current over a wide voltage range. These
devices are manufactured in the cost effective SOD-80 double plug case which provides many benefits
to the user including space saving and improved thermal characteristics. Special selections of IP
(regulator current) are available for critical applications.
MAXIMUM RATINGS: (TL=75°C)
SYMBOL
UNITS
Peak Operating Voltage
POV
50
V
Power Dissipation
Operating and Storage
PD 800
mW
Junction Temperature
TJ,Tstg
-65 to +200
°C
TYPE NO.
REGULATOR(1)
CURRENT
IP@VT=25V
DYNAMIC
IMPEDANCE
ZT@VT=25V
KNEE
IMPEDANCE
ZK@VK=6.0V
LIMITING
VOLTAGE
TEMPERATURE
COEFFICIENT
VL@IL=0.8 IP MIN
TC*
CCLHM080
CCLHM100
CCLHM120
mA
MIN NOM MAX
6.56 8.20 9.84
8.00 10.0 12.0
9.60 12.0 14.4
M
MIN
0.32
0.17
0.08
k
MIN
15
6.0
3.0
VOLTS
MAX
3.1
3.5
3.8
%/°C
-0.25 TO -0.45
-0.25 TO -0.45
-0.25 TO -0.45
CCLHM150 12.0 15.0 18.0
0.03
2.0
4.3 -0.25 TO -0.45
*The Temperature Coefficient is measured between the following points: +25°C, +50°C
( )(1) PULSED METHOD.
PULSE WIDTH (ms)= 27.5
IPNOM (mA)
R3 ( 21-August 2001)

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