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Numéro de référence | NSB9435T1G | ||
Description | High Current Bias Resistor Transistor | ||
Fabricant | ON Semiconductor | ||
Logo | |||
1 Page
NSB9435T1G,
NSV9435T1G
High Current Bias Resistor
Transistor
PNP Silicon
Features
Collector −Emitter Sustaining Voltage −
VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc
High DC Current Gain −
hFE = 125 (Min) @ IC = 0.8 Adc
= 90 (Min) @ IC = 3.0 Adc
Low Collector −Emitter Saturation Voltage −
VCE(sat) = 0.275 Vdc (Max) @ IC = 1.2 Adc
= 0.55 Vdc (Max) @ IC = 3.0 Adc
SOT−223 Surface Mount Packaging
ESD Rating − Human Body Model: Class 1B
− Machine Model: Class B
AEC−Q101 Qualified and PPAP Capable
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating
Symbol Value
Unit
ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏCollector−Emitter Voltage
ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏCollector−Base Voltage
ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏEmitter−Base Voltage
ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏBase Current − Continuous
ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏCollector Current
Continuous
ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏPeak
VCEO
VCB
VEB
IB
IC
30
45
6.0
1.0
3.0
5.0
Vdc
Vdc
Vdc
Adc
Adc
ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏTotal Power Dissipation
ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ@ TC = 25_C
Derate above 25_C
ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏTotal PD @ TA = 25_C mounted on 1 sq.
(645 sq. mm) Collector pad on FR−4 bd
ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏmaterial
ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏTotal PD @ TA = 25_C mounted on 0.012
sq. (7.6 sq. mm) Collector pad on FR−4 bd
ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏmaterial
PD
W
3.0 mW/_C
24 W
1.56
W
0.72
ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏOperating and Storage Junction
Temperature Range
TJ, Tstg – 55 to
+ 150
_C
ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏStresses exceeding Maximum Ratings may damage the device. Maximum
ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏRatings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2011
December, 2011 − Rev. 7
1
http://onsemi.com
POWER BJT
IC = 3.0 AMPERES
BVCEO = 30 VOLTS
VCE(sat) = 0.275 VOLTS
SOT−223
CASE 318E
STYLE 1
COLLECTOR 2, 4
BASE
1
EMITTER 3
MARKING DIAGRAM
AYW
9435R G
G
1
A = Assembly Location
Y = Year
W = Work Week
9435R = Device Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NSB9435T1G
NSV9435T1G
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
1,000/Tape & Reel
1,000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NSB9435T1/D
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Pages | Pages 5 | ||
Télécharger | [ NSB9435T1G ] |
No | Description détaillée | Fabricant |
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