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BAS16M3T5G fiches techniques PDF

ON Semiconductor - Switching Diode

Numéro de référence BAS16M3T5G
Description Switching Diode
Fabricant ON Semiconductor 
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BAS16M3T5G fiche technique
BAS16M3T5G
Switching Diode
Features
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
VR 100 Vdc
Peak Forward Current
IF 200 mAdc
Peak Forward Surge Current
IFM(surge) 500 mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Total Device Dissipation,
FR4 Board (Note 1)
TA = 25°C
Derated above 25°C
PD
260 mW
2.0 mW/°C
Thermal Resistance,
JunctiontoAmbient (Note 1)
RqJA
490 °C/W
Total Device Dissipation,
FR4 Board (Note 2)
TA = 25°C
Derated above 25°C
Thermal Resistance,
JunctiontoAmbient (Note 2)
PD
RqJA
580 mW
4.6 mW/°C
215 °C/W
Junction and Storage
Temperature Range
TJ, Tstg
55 to
+150
°C
1. FR4 @ Minimum Pad
2. FR4 @ 1.0 × 1.0 Inch Pad
http://onsemi.com
3
CATHODE
1
ANODE
MARKING
DIAGRAM
3
SOT723
12
CASE 631AA
STYLE 2
A6 M
A6 = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping
BAS16M3T5G
SOT723 8000 / Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
May, 2013 Rev. 4
1
Publication Order Number:
BAS16M3/D

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