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WPM3021 fiches techniques PDF

WillSEMI - MOSFET ( Transistor )

Numéro de référence WPM3021
Description MOSFET ( Transistor )
Fabricant WillSEMI 
Logo WillSEMI 





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WPM3021 fiche technique
WPM3021
Single P-Channel, -30V, -11.5A, Power MOSFET
VDS (V)
-30
Typical RDS(on) (m)
11@ VGS=-10V
15@VGS=-5V
Descriptions
The WPM3021 is P-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS(ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WPM3021 is Pb-free.
Features
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Small package SOP-8L
WPM3021
Http://www.sh-willsemi.com
(4)
(3)
(2)
(1)
SOP-8L
DD
87
DD
65
12
SS
34
SG
Pin configuration (Top view)
Applications
DC/DC converters
Power supply converters circuit
Load/Power Switching for portable device
PS =DeviceCode
Y = Year
W = Week(A~z)
Marking
Order information
Device
WPM3021-8/TR
Package
SOP-8L
Shipping
2500/Tape&Reel
Will Semiconductor Ltd. 1 2016/08/03-Rev.1.0

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