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PDF WPM2083 Data sheet ( Hoja de datos )
| Número de pieza | WPM2083 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | WillSEMI | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de WPM2083 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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WPM2083
Single P-Channel, -20V, -2.4A, Power MOSFET
WPM2083
Http://www.sh-willsemi.com
VDS (V)
-20
Typical RDS(on) (mΩ)
81 @ VGS=-4.5V
110 @ VGS=-2.5V
Descriptions
The WPM2083 is P-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS(ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WPM2083 is Pb-free.
D
S
G
SOT-23
D
3
12
GS
Pin configuration (Top view)
Features
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Small package SOT-23
Applications
DC/DC converters
Power supply converters circuit
Load/Power Switching for portable device
PC = Device Code
Y = Year
W = Week(A~z)
Marking
Order information
Device
WPM2083-3/TR
Package
SOT-23
Shipping
3000/Tape&Reel
Will Semiconductor Ltd. 1 Sept.2016- Rev.1.0
1 page  
700
Ciss
F = 1MHZ
600
500
400
300
Coss
200
Crss
100
0
0 3 6 9 12 15
-VDS-Drain to Source Voltage (V)
Capacitance
120
100 TJ(MAX)=150oC
TA=25oC
80
60
40
20
0
1E-4
1E-3
0.01
0.1
1
10
Pulse width (S)
100 1000
Single pulse power
WPM2083
5
4
3
2 T=150oC
1 T=25oC
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VSD-Source to Drain Voltage (V)
Body diode forward voltage
100
10 Limit by Rdson
100us
1
0.1
0.01
0.1
1ms
10s
TA=25oC
Single Pulse
10ms
100ms
DC 1s
BVDSS Limit
1 10
-VDS-Drian to Source Voltage(V)
*VGS>minimum VGS at which RDS(ON) is specified
100
Safe operating power
4 VDS=-10V
ID=-2.4A
3
2
1
0
12345
Qg(nC)
Gate Charge Characteristics
Will Semiconductor Ltd. 5 Sept.2016- Rev.1.0
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WPM2083.PDF ] | |
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