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PDF WNM6002 Data sheet ( Hoja de datos )
| Número de pieza | WNM6002 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | WillSEMI | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de WNM6002 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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WNM6002
Single N-Channel, 60V, 0.30A, Power MOSFET
VDS (V)
Rds(on) (Ω)
1.4@ VGS=10V
60
1.7@ VGS=4.5V
ESD Rating:2000V HBM
Descriptions
The WNM6002 is N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNM6002 is Pb-free and
Halogen-free.
WNM6002
Http//:www.sh-willsemi.com
SOT-323
D
3
12
GS
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package SOT-323
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
Pin configuration (Top view)
3
62*
1
2
62 = Device Code
* = Month (A~Z)
Marking
Order information
Device
Package
Shipping
WNM6002-3/TR SOT-323 3000/Reel&Tape
Will Semiconductor Ltd. 1 Sep, 2013 - Rev.1.0
1 page  
WNM6002
40
1
35 ciss
coss
30 crss
25 0.1
20
15
10
5
0
0
20
15
10
5
0
1E-4
5 10 15 20 25
V
DS
(V)
Capacitance
TJ(Max)=150°C
TA=25°C
1E-3 0.01 0.1 1 10
Pulse width (S)
100 1000
-50oC
25oC
0.01 85oC
125oC
150oC
1E-3
0.4 0.6 0.8 1.0 1.2
VSD-Source-to-Drain Voltage(V)
Body diode forward voltage
1 Limit by Rdson*
100us
0.1
0.01
1E-3
0.1
1ms
TA=25C
Single Pulse
10ms
DC 100ms
1s
10s
Bvdss Limit
1 10 100
V DS- Drain Source Voltage (V)
Single pulse power
Safe operating power
10
V =30V I =0.37A
DD D
8
6
4
2
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Q (nC)
g
Gate Charge Characteristics
Will Semiconductor Ltd. 5 Sep, 2013 - Rev.1.0
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WNM6002.PDF ] | |
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