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Numéro de référence | WNM3018 | ||
Description | MOSFET ( Transistor ) | ||
Fabricant | WillSEMI | ||
Logo | |||
WNM3018
Small Signal N-Channel, 30V, 0.2A, MOSFET
VDS (V) Typical Rds(on) (Ω)
1.2@ VGS=10V
30 1.4@ VGS=4.5V
1.9@ VGS=2.5V
ESD Rating: 2000V HBM
Descriptions
The WNM3018 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in small signal switch. Standard Product WNM3018
is Pb-free and Halogen-free.
WNM3018
Http://www.sh-willsemi.com
Pin configuration (Top view)
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
HBM ESD protection >2 kV
Small package SOT-323
Applications
Driver: Relay, Solenoid, Lamps,Hammers etc.
Power supply converters circuit
Load/Power Switching for potable device
18 = Device Code
* = Month (A~Z)
Marking
Order information
Device
WMN3018-3/TR
Package
Shipping
SOT-323 3000/Reel&Tape
Will Semiconductor Ltd.
1 2015/8/10 – Rev. 1.0
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Pages | Pages 8 | ||
Télécharger | [ WNM3018 ] |
No | Description détaillée | Fabricant |
WNM3011 | N-Channel MOSFET | Will Semiconductor |
WNM3013 | N-Channel MOSFET | Will Semiconductor |
WNM3017 | MOSFET ( Transistor ) | WillSEMI |
WNM3018 | MOSFET ( Transistor ) | WillSEMI |
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