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WNM01N11 fiches techniques PDF

WillSEMI - MOSFET ( Transistor )

Numéro de référence WNM01N11
Description MOSFET ( Transistor )
Fabricant WillSEMI 
Logo WillSEMI 





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WNM01N11 fiche technique
WNM01N11
Single N-Channel, 110V, 1.8A, Power MOSFET
VDS (V)
110
Typical Rds(on) ()
0.230@ VGS=10V
0.250@ VGS=4.5V
WNM01N11
Http://www.sh-willsemi.com
Descriptions
The WNM01N11 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNM01N11 is Pb-free and
Halogen-free.
SOT-23-6L
DDS
65 4
123
DDG
Pin configuration (Top view)
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Small package SOT-23-6L
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
 
1N11 = Device Code
MA= Special Code
YW= Year&Week
Marking
Order information
Device
Package
Shipping
WNM01N11-6/TR SOT-23-6L 3000/Reel&Tape
Will Semiconductor Ltd.
1 2016/02/25 – Rev. 1.0

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