(PDF) WSB5546N Datasheet - Schottky Barrier Diode

Número de pieza	WSB5546N
Descripción	Schottky Barrier Diode
Fabricantes	WillSEMI
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No Preview Available ! WSB5546N 0.2A, Schottky Barrier Diode Features  Low reverse current  0.2A Average rectified forward current  Standard products are Pb-free and Halogen-free WSB5546N Http://www.sh-willsemi.com DFN1006-2L Circuit Absolute maximum ratings Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Peak forward current (1) Junction temperature Operating temperature Storage temperature Symbol VRM VR IO IFSM TJ Topr Tstg Marking Value 40 40 0.2 3 150 -40 ~ 150 -55 ~ 150 Unit V V A A OC OC OC Electronics characteristics (TA=25oC) Parameter Symbol Condition Forward voltage (2) Reverse current Junction capacitance Thermal resistance VF IR CJ Rθ(j-a) IF=0.2A VR=10V VR=40V VR=4V, F=1MHz Junction to ambient Min. - - - - - Order Informations Device WSB5546N-2/TR Package DFN1006-2L Marking M* (3) Typ. 0.51 - - 17 - Max. 0.60 0.5 1 - 500 Unit V uA uA pF K/W Shipping 10000/Reel&Tape Note 1: Pulse Width=8.3ms, Single half-sine Pulse; Note 2: Pulse Width<380us; Note 3:* = Month code (A~Z); M = Device code; Will Semiconductor Ltd. 1 2014/11/21 – Rev. 1.0 1 page

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PDF WSB5546N Data sheet ( Hoja de datos )