(PDF) WSB5539N Datasheet - Schottky Barrier Diode

Número de pieza	WSB5539N
Descripción	Schottky Barrier Diode
Fabricantes	WillSEMI
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No Preview Available ! WSB5539N 0.5A, Schottky Barrier Diode Features WSB5539N Http://www.willsemi.com  Low forward voltage  0.5A Average rectified forward current  Peak forward current tested  Standard products are Pb-free and Halogen-free DFN1006-2L Circuit Absolute maximum ratings Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Peak forward current (1) Junction temperature Operating temperature Storage temperature Symbol VRM VR IO IFSM TJ Topr Tstg Marking Value 40 40 0.5 3 150 -40 ~ 85 -55 ~ 150 Unit V V A A OC OC OC Electronics characteristics (TA=25oC) Parameter Symbol Condition Forward voltage Reverse current Junction capacitance Thermal resistance VF IR CJ Rθ(j-a) IF=0.5A VR=40V VR=4V, F=1MHz Junction to ambient Min. - - - Order Informations Device WSB5539N-2/TR Package DFN1006-2L Marking C* (2) Note 1 : Pulse Width=8.3ms, Single Pulse Note 2 : * = Month code (A~Z); C = Device code Typ. 0.53 3 20 Max. 0.63 100 500 Unit V uA pF K/W Shipping 10000/Reel&Tape Will Semiconductor Ltd. 1 2014/9/10 – Rev. 1.0 1 page

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PDF WSB5539N Data sheet ( Hoja de datos )