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WSB5523D fiches techniques PDF

WillSEMI - Schottky Barrier Diode

Numéro de référence WSB5523D
Description Schottky Barrier Diode
Fabricant WillSEMI 
Logo WillSEMI 





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WSB5523D fiche technique
WSB5523D
Middle Power Schottky Barrier Diode
Features
1 A rectified forward current
Low forward voltage
Low leakage current
FBP package
Applications
Switching circuit
Middle current rectification
Absolute maximum ratings
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average Forward current (1)
Repetitive Peak Forward Current@tp1ms,
duty25%
Forward Peak Surge Current @t=8.3ms
(single pluse)
Junction temperature
Operating temperature
Storage temperature
WSB5523D
Http://www.sh-willsemi.com
FBP1608-02L
Circuit
Marking
Symbol
VRM
VR
IF(AV)
IFRM
IFSM
TJ
Topr
Tstg
Value
40
40
1.0
4
7
150
-40 ~ 150
-55 ~ 150
Unit
V
V
A
A
A
OC
OC
OC
Electronics characteristics (TA=25oC)
Parameter
Symbol
Condition
Forward voltage
Reverse current
Junction capacitance
VF
IF=500mA(2)
IF=1A(2)
IR VR=40V
CJ VR=4V, F=1MHz
Min.
Typ.
0.40
0.48
Order Informations
Device
WSB5523D-2/TR
Package
FBP1608-02L(1.6*0.8)
Marking
*23(3)
Max.
0.5
0.62
0.1
35
Unit
V
V
mA
pF
Shipping
10000/Reel&Tape
Will Semiconductor Ltd.
1 Jul, 2015 - Rev. 1.4

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