(PDF) WSB5511M Datasheet - Schottky Barrier Diode

Número de pieza	WSB5511M
Descripción	Schottky Barrier Diode
Fabricantes	WillSEMI
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No Preview Available ! WSB5511M 3A Schottky Barrier Diode Features  Low forward voltage  Extremely low thermal resistance  High current capability Applications  Switching circuit  Middle current rectification Absolute maximum ratings Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (DC) Forward Peak Surge Current (1) Junction temperature Operating temperature Storage temperature WSB5511M Http://www.sh-willsemi.com SMA (DO-214AC) Circuit Symbol VRRM VR IO IFSM TJ Topr Tstg Marking Value 40 40 3.0 50 -55 ~ 150 -55 ~ 150 -55 ~ 150 Unit V V A A OC OC OC Electronics characteristics (TA=25oC) Parameter Symbol Condition Forward voltage (2) Reverse current Junction capacitance Thermal resistance VF IR CJ Rθ(J-L) IF=3.0A VR=40V VR=4V, F=1MHz Junction to Lead (Fig.2) Min. Typ. 220 17 Max. 0.50 0.5 Unit V mA pF K/W Order Informations Device WSB5511M-2/TR Package SMA (DO-214AC) Marking .EC* (3) Shipping 5000/Reel&Tape Note1: Pulse width=8.3ms, single pulse; Note2: Single Pulse, test Tp=380us; Note3: * =Month code (A~Z); .EC =Device code； Will Semiconductor Ltd. 1 May, 2014 - Rev. 1.5 1 page

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PDF WSB5511M Data sheet ( Hoja de datos )