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PDF WPMD2011 Data sheet ( Hoja de datos )
| Número de pieza | WPMD2011 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | WillSEMI | |
| Logotipo |  |
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WPMD2011
Dual P-Channel -20V, -4.4A, 52mȍ Power MOSFET
V(BR)DSS
-20
Rds(on)
()
0.052 @ -4.5V
0.064 @ -2.5V
0.080 @ -1.8V
0.090 @ -1.5V
Description
The WPMD2011 is P-Channel enhancement dual
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS(ON) with
low gate charge. This device is suitable for use in
DC-DC conversion and power switch applications.
Standard Product WPMD2011 is Pb-free.
Features
WPMD2011
Http://www.willsemi.com
DFN2x2-6L
S1 1
G1 2
D1
6 D1
5 G2
D2 3
D2
4 S2
Pin Configuration (Top View)
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for highest DC current
z Extremely low threshold voltage
z Bidirectional current flow with common source
configuration
z DFN2x2 package provides exposed drain pad for
excellent thermal conduction
WLSI
GYWW
WLSI
G
Y
WW
= Company Code
= Device Code
= Year (last digit)
= Week
Applications
Order Information
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power switch
z High side load switch
z Battery management and charging circuit
Device
Package
Shipping
WPMD2011-6/TR DFN2x2-6L 3000/Tape&Reel
Will Semiconductor Ltd.
1
Dec,2011 - Rev.1.2
1 page  
1750
1500
1250
1000
750
500
250
0
0
V =0V
GS
F=1MHz
Ciss
Coss
Crss
4 8 12 16 20
-V Drain-to-Source Voltage (V)
DS
Capacitance
20
15
10
5
0
0.001
0.01
0.1
1
10 100 1000
Pulse (s)
Single Pulse Power
WPMD2011
0.64
0.60
0.56
T= 25oC
0.52
0.48
0.44
T=150oC
0.40
0.36
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
-I -Source to Drain Current(A)
SD
Drain to Source Diode Forward Voltage
100
Limited by RDS(on)
10
100 μs
1 ms
1
10 ms
100 ms
1 s, 10 s
0.1 DC
BVDSS Limited
0.01
0.1
1 10
VDS - Drain-to-Source Voltage (V)
Safety Operation Area
100
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
PD
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 75 °C/W
3. T J - TA = PDZthJA(t)
4. Surface Mounted
10 100 1000
Transient thermal response (Junction-to-Ambient)
Will Semiconductor Ltd.
5 Dec,2011 - Rev.1.2
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet WPMD2011.PDF ] | |
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