DataSheetWiki


WPM5001 fiches techniques PDF

WillSEMI - MOSFET ( Transistor )

Numéro de référence WPM5001
Description MOSFET ( Transistor )
Fabricant WillSEMI 
Logo WillSEMI 





1 Page

No Preview Available !





WPM5001 fiche technique
WPM5001
Single P-Channel, -50V, -0.3A, Power MOSFET
VDS (V)
-50
Typical Rds(on) (Ω)
3.0@ VGS= –10V
3.5@ VGS= –5V
WPM5001
Http//:www.sh-willsemi.com
Descriptions
The WPM5001 is P-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WPM5001 is Pb-free and
Halogen-free.
Features
SOT-23
Pin configuration (Top view)
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package SOT-23
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
W=Willsemi
01= Device Code
*= Month (A~Z)
Marking
Order information
Device
WPM5001-3/TR
Package
SOT-23
Shipping
3000/Reel&Tape
Will Semiconductor Ltd. 1 Feb, 2014 - Rev.1.0

PagesPages 7
Télécharger [ WPM5001 ]


Fiche technique recommandé

No Description détaillée Fabricant
WPM5001 MOSFET ( Transistor ) WillSEMI
WillSEMI

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche