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Numéro de référence | WNMD2165 | ||
Description | Dual N-Channel MOSFET | ||
Fabricant | Will Semiconductor | ||
Logo | |||
WNMD2165
Dual N-Channel, 60V, 0.32A, Power MOSFET
VDS (V)
Rds(on) (Ω)
1.4@ VGS=10V
60
1.7@ VGS=4.5V
ESD Rating:2000V HBM
Descriptions
The WNMD2165 is Dual N-Channel enhancem
-ent MOS Field Effect Transistor. Uses advanced
trench technology and design to provide excellent
RDS (ON) with low gate charge. This device is suitable
for use in DC-DC conversion, power switch and
charging circuit. Standard Product WNMD2165 is
Pb-free and Halogen-free.
WNMD2165
Http//:www.sh-willsemi.com
SOT-363
D1 G2 S2
6 54
1 23
S1 G1 D2
Features
Pin configuration (Top view)
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package SOT-363
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
6 54
65*
1 23
65 = Device Code
* = Month (A~Z)
Marking
Order information
Device
Package
Shipping
WNMD2165-6/TR SOT-363 3000/Reel&Tape
Will Semiconductor Ltd. 1 Sep, 2013 - Rev.1.0
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Pages | Pages 7 | ||
Télécharger | [ WNMD2165 ] |
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