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WNMD2162 fiches techniques PDF

Will Semiconductor - Dual N-Channel MOSFET

Numéro de référence WNMD2162
Description Dual N-Channel MOSFET
Fabricant Will Semiconductor 
Logo Will Semiconductor 





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WNMD2162 fiche technique
WNMD2162
WNMD2162
Dual N-Channel, 20V, 4.8A, Power MOSFET
VDS (V)
20
ESD Protected
Descriptions
Rds(on) (Ω)
0.016@ VGS=4.5V
0.019@ VGS=3.1V
0.022@ VGS=2.5V
The WNMD2162 is Dual N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2162 is Pb-free and Halogen-
free .
Http//:www.willsemi.com
PDFN2.9×2.8-8L
D2 D2
87
D1
6
D1
5
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package PDFN2.9×2.8-8L
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
1 23 4
S2 G2 S1 G1
Pin configuration (Top view)
8 765
2162
YYWW
1 23 4
2162
YY
WW
= Device Code
= Year
= Week
Marking
Order information
Device
WNMD2162-8/TR
Package
PDFN
2.9×2.8-8L
Shipping
3000/Reel&Tape
Will Semiconductor Ltd. 1 Jan, 2015 - Rev.1.2

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