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PDF WNMD2160 Data sheet ( Hoja de datos )
| Número de pieza | WNMD2160 | |
| Descripción | Dual N-Channel MOSFET | |
| Fabricantes | Will Semiconductor | |
| Logotipo |  |
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WNMD2160
Dual N-Channel, 20V, 6.3A, Power MOSFET
VDS (V)
Rds(on) (ȍ)
0.0157@ VGS=4.5V
0.018@ VGS=3.1V
20
0.020@ VGS=2.5V
ESD Rating: 2000V HBM
WNMD2160
Http//:www.willsemi.com
Descriptions
The WNMD2160 is N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2160 is Pb-free.
Features
SOT-23-6L
G1 D1/D2 G2
654
1 23
S1 D1/D2 S2
Pin configuration (Top view)
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-23-6L
Applications
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
6 54
2160
YYWW
1 23
2160
YY
WW
= Device Code
= Year
= Week
Marking
Order information
Device
Package
Shipping
WNMD2160-6/TR SOT-23-6L 3000/Reel&Tape
Will Semiconductor Ltd. 1 Jan, 2015 - Rev.1.4
1 page  
1200
V =0V
GS
1000 f=100KHZ
800
600 Cin
Cout
400 Cres
200
0 2 4 6 8 10 12 14
V DraintoSource Voltage(V)
DS
Capacitance
40
TJ(Max)=150°C
TA=25°C
30
20
10
0
0.001 0.01
0.1 1 10
Pulse Width (s)
100 1000
WNMD2160
2.0
1.6
1.2
T=1500C
0.8
0.4
T=250C
0.2 0.4 0.6 0.8
V - Source toDrainVoltage (V)
SD
Body diode forward voltage
100
TJ(Max)=150°C, TA=25°C
RDS(ON)
limited
10
10Ps
100Ps
1
0.1
0.1
DC
10s
1 10
VDS (Volts)
1ms
10ms
100m
1s
100
Single pulse power
Safe operating power
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
VDD=10V
ID=7A
2 4 6 8 10
Qg (nC)
Gate Charge Characteristics
12
Will Semiconductor Ltd. 5 Jan, 2015 - Rev.1.4
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WNMD2160.PDF ] | |
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