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WNMD2158 fiches techniques PDF

Will Semiconductor - Dual N-Channel MOSFET

Numéro de référence WNMD2158
Description Dual N-Channel MOSFET
Fabricant Will Semiconductor 
Logo Will Semiconductor 





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WNMD2158 fiche technique
WNMD2158
Dual N-Channel, 20V, 7.0A, Power MOSFET
VDS (V)
Rds(on) (ȍ)
0.0148@ VGS=4.5V
0.017@ VGS=3.1V
20
0.019@ VGS=2.5V
ESD Rating: 2000V HBM
WNMD2158
www.sh-willsemi.com
Descriptions
TSSOP-8L
D1/D2 S2 S2 G2
8765
The WNMD2158 is N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2158 is Pb-free.
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package TSSOP-8L
1234
D1/D2 S1 S1 G1
Pin configuration (Top view)
8765
2158
YYWW
Applications
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
1234
2158 = Device Code
YY =Year
WW =Week
Marking
Order information
Device
Package
Shipping
WNMD2158-8/TR TSSOP-8L 3000/Reel&Tape
Will Semiconductor Ltd. 1 Jan, 2015 - Rev.1.6

PagesPages 7
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