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Numéro de référence | WNMD2155 | ||
Description | Dual N-Channel MOSFET | ||
Fabricant | Will Semiconductor | ||
Logo | |||
WNMD2155
WNMD2155
Dual N-Channel, 20V, 7.9A, Power MOSFET
Http//:www.willsemi.com
VDS (V)
Rds(on) (ȍ)
0.018@ VGS=10V
0.020@ VGS=4.5V
20
0.025@ VGS=2.5V
0.031@ VGS=1.8V
Descriptions
The WNMD2155 is N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2155 is Pb-free.
SOP-8L
D1 D1 D2
8 76
D2
5
Features
z Trench Technology
1 234
S1 G1 S2 G2
Pin configuration (Top view)
8 7 65
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOP-8L
Applications
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
WNM2155
YYWW
1 2 34
=Logo
WNM2155 = Device Code
YY = Year
WW = Week
Marking
Order information
Device
Package
Shipping
WNMD2155-8/TR SOP-8L 3000/Reel&Tape
Will Semiconductor Ltd. 1 Dec,2014 - Rev.1.2
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Pages | Pages 6 | ||
Télécharger | [ WNMD2155 ] |
No | Description détaillée | Fabricant |
WNMD2153 | Dual N-Channel MOSFET | Will Semiconductor |
WNMD2154 | Dual N-Channel MOSFET | Will Semiconductor |
WNMD2155 | Dual N-Channel MOSFET | Will Semiconductor |
WNMD2156 | Dual N-Channel MOSFET | Will Semiconductor |
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