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PDF WNM2020 Data sheet ( Hoja de datos )
| Número de pieza | WNM2020 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Will Semiconductor | |
| Logotipo |  |
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WNM2020
N-Channel, 20V, 0.90A, Small Signal MOSFET
VDS (V)
20
Rds(on) (ȍ)
0.220@ VGS=4.5V
0.260@ VGS=2.5V
0.320@ VGS=1.8V
WNM2020
Http//:www.willsemi.com
Descriptions
SOT-23
The WNM2020 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, load switch and level shift.
Standard Product WNM2020 is Pb-free.
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance
z Extremely Low Threshold Voltage
z Small package SOT-23
Applications
D
3
12
GS
Pin configuration (Top view)
3
W28*
12
W28 = Device Code
* = Month (A~Z)
Marking
z DC-DC converter circuit
z Small Signal Switch
z Load Switch
z Level Shift
z
Order information
Device
Package
Shipping
WNM2020-3/TR SOT-23 3000/Reel&Tape
Will Semiconductor Ltd.
1
Nov, 2012 - Rev.1.4
3
1 page  
WNM2020
60 0.8
V =0V
GS
50 F=100kHz
40 0.6 T=150oC
Ciss
30
Coss
Crss
0.4
T=25oC
20
10 0.2
0
0 2 4 6 8 10
V Drain-to-Source Voltage (V)
DS
Capacitance
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
V -Source-to-Drain Voltage(V)
SD
Body diode forward voltage
10
2
1
Duty Cycle = 0.5
1
0.1 Limited by RDS(on)
0.01
10 ms
100 ms
1s
10 s
DC
0.001
TA = 25 °C
Single Pulse
0.1 1 10
VDS - Drain-to-Source Voltage (V)
100
Safe operating power
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 320 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
Transient thermal response (Junction-to-Ambient)
Will Semiconductor Ltd.
5
Nov, 2012 - Rev.1.4
3
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet WNM2020.PDF ] | |
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