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PDF NGTB15N135IHRWG Data sheet ( Hoja de datos )
| Número de pieza | NGTB15N135IHRWG | |
| Descripción | IGBT | |
| Fabricantes | ON Semiconductor | |
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NGTB15N135IHRWG
IGBT with Monolithic Free
Wheeling Diode
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications.
Features
• Extremely Efficient Trench with Fieldstop Technology
• 1350 V Breakdown Voltage
• Optimized for Low Case Temperature in IH Cooker Application
• Reliable and Cost Effective Single Die Solution
• These are Pb−Free Devices
Typical Applications
• Inductive Heating
• Consumer Appliances
• Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
Pulsed collector current, Tpulse
limited by TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
Diode pulsed current, Tpulse limited
by TJmax
Gate−emitter voltage
Transient Gate−emitter Voltage
(Tpulse = 5 ms, D < 0.10)
Power Dissipation
@ TC = 25°C
@ TC = 100°C
Operating junction temperature
range
VCES
IC
ICM
IF
IFM
VGE
PD
TJ
1350
30
15
60
30
15
60
$20
±25
357
178
−40 to +175
V
A
A
A
A
V
W
°C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
−55 to +175
260
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
15 A, 1350 V
VCEsat = 2.15 V
Eoff = 0.42 mJ
C
G
E
G
C
E
TO−247
CASE 340AL
MARKING DIAGRAM
15N135IHR
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
NGTB15N135IHRWG
Package Shipping
TO−247 30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 0
1
Publication Order Number:
NGTB15N135IHR/D
1 page  
NGTB15N135IHRWG
TYPICAL CHARACTERISTICS
1.2
1.1
0.8
0.6
0.4
0.2
0
5
Eoff
VCE = 600 V
VGE = 15 V
TJ = 150°C
IC = 15 A
15 25 35 45 55 65 75
Rg, GATE RESISTOR (W)
Figure 13. Switching Loss vs. Rg
85
1000
td(off)
tf
100
5
VCE = 600 V
VGE = 15 V
TJ = 150°C
IC = 15 A
15 25 35 45 55 65 75
Rg, GATE RESISTOR (W)
Figure 14. Switching Time vs. Rg
85
1.2
1.0
Eoff
0.8
0.6
0.4 VGE = 15 V
TJ = 150°C
0.2
IC = 15 A
Rg = 10 W
0
350 400 450 500 550 600 650 700 750
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
800
1000
VGE = 15 V
TJ = 150°C
IC = 15 A
Rg = 10 W
tf
td(off)
100
350 400 450 500 550 600 650 700 750 800
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 16. Switching Time vs. VCE
1000
1000
100 50 ms
1 ms
10 100 ms
dc operation
1
Single Nonrepetitive
0.1 Pulse TC = 25°C
Curves must be derated linearly
with increase in temperature
0.01
1 10 100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
100
10
VGE = 15 V
TC = 125°C
1
1
10
100
1000
10,000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 18. IC vs. VCE
http://onsemi.com
5
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