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Fairchild Semiconductor - Field Stop Trench IGBT

Numéro de référence FGH50T65SQD
Description Field Stop Trench IGBT
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FGH50T65SQD fiche technique
FGH50T65SQD
650 V, 50 A Field Stop Trench IGBT
April 2016
Features
• Maximum Junction Temperature : TJ =175oC
• Positive Temperaure Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 50 A
• 100% of the Parts Tested for ILM(1)
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
• RoHS Compliant
General Description
Using novel field stop IGBT technology, Fairchild’s new series of
field stop 4th generation IGBTs offer the optimum performance
for solar inverter, UPS, welder, telecom, ESS and PFC applica-
tions where low conduction and switching losses are essential.
Applications
• Solar Inverter, UPS, Welder, Telecom, ESS, PFC
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ILM (1)
ICM (2)
IF
IFM
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1. VCC = 400 V, VGE = 15 V, IC = 200 A, RG = 3 Ω, Inductive Load
2. Repetitive rating: Pulse width limited by max. junction temperature
©2016 Fairchild Semiconductor Corporation
FGH50T65SQD Rev. 1.0
1
C
G
E
FGH50T65SQD_F155
650
± 20
± 30
100
50
200
200
50
30
200
268
134
-55 to +175
-55 to +175
300
Unit
V
V
V
A
A
A
A
A
A
A
W
W
oC
oC
oC
www.fairchildsemi.com

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