|
|
Datasheet CBSL100-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
CBS Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | CBS05F30 | Schottky Barrier Diode Schottky Barrier Diode Silicon Epitaxial
CBS05F30
1. Applications
• High-Speed Switching
2. Features
(1) Low forward voltage: VF(3) = 0.38 V (typ.) (2) Thin and compact packaging: Height = 0.40mm(max)
3. Packaging and Internal Circuit
CBS05F30
1: Cathode 2: Anode
CST2B
4. Absolute Maximum Rati  Toshiba Semiconductor diode | | |
| 2 | CBS084A00-TJN | LCM MODULE C-7
:(086)0755-26919178
: (086)0755 -26911092
Http://www.av-display.com.cn
SHENZHEN AV-DISPLAY CO.,LTD Address:North East C-7 Building, Wenchang Street Eastern
District, OCT, ShenZhen, China TEL: (086)0755-26919178 FAX: (086)0755-26911092 Http://www.av-display.com.cn
SPECIFICATION FOR
LCM MODUL  AV-DISPLAY data | | |
| 3 | CBS10S30 | Schottky Barrier Diode Schottky Barrier Diode Silicon Epitaxial
CBS10S30
1. Applications
• High-Speed Switching
2. Packaging and Internal Circuit
CBS10S30
CST2B
1: Cathode 2: Anode
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
Peak reverse v  Toshiba diode | | |
| 4 | CBSL1 | NPN SILICON RF POWER TRANSISTOR CBSL1
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI CBSL1 is Designed for UHF Class A Amplifier Applications in Cellular Base Station Equipment.
PACKAGE STYLE .280 4L STUD
A 45°
FEATURES:
• Pg = 10 dB min. @ 960 MHz • P1dB = 1.0 Watts min. at 960 MHz • Omnigold™ Metalization Syste  Advanced Semiconductor transistor | | |
| 5 | CBSL100 | NPN SILICON RF POWER TRANSISTOR CBSL100
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI CBSL100 is Designed for
PACKAGE STYLE .400 BAL FLG (C)
.080x45° A B FULL R (4X).060 R E D C .1925 F H I N L G M
FEATURES:
• Input Matching Network • • Omnigold™ Metalization System
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TS Advanced Semiconductor transistor | | |
| 6 | CBSL15 | NPN SILICON RF POWER TRANSISTOR CBSL15
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI CBSL15 is Designed for
.040x45° C B 2XØ.130
PACKAGE STYLE .230 6L FLG
A 4X .025 R .115 .430 D E .125 G H I J K L F
FEATURES:
• • • Omnigold™ Metalization System
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 2.5 A 48 V Advanced Semiconductor transistor | | |
| 7 | CBSL150 | NPN SILICON RF POWER TRANSISTOR CBSL150
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI CBSL150 is Designed for 900 MHz Class AB Cellular Base Station Amplifiers.
PACKAGE STYLE .400 BAL FLG (C) FEATURES:
• Internal Input/Output Matching • PG = 9.0 dB Typ. at 150 W/ 900 MHz • Omnigold™ Metalization System
E D C .1925 Advanced Semiconductor transistor | |
| Esta página es del resultado de búsqueda del CBSL100-PDF.HTML. Si pulsa el resultado de búsqueda de CBSL100-PDF.HTML se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |