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PDF EMS30D10E Data sheet ( Hoja de datos )
| Número de pieza | EMS30D10E | |
| Descripción | Schottky Rectifier ( Diode ) | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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Dual High‐Voltage Trench Barrier Schottky Rectifier
Product Summary:
VRRM
VF @ IF=15A
IF(AV)
100V
0.63V
2 x 15A
Trench Schottky Technology
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Maximum Repetitive Peak Reverse Voltage
Maximum Average Forward Rectified Current
Per device
Per diode
VRRM
IF(AV)
Peak Forward Surge Current 8.3mS Single Half Sine‐wave
Superimposed on Rated Load per Diode
IFSM
Peak Repetitive Reverse Current @ tp = 2 μs, 1 kHz,
TJ = 38 °C ± 2 °C per Diode
IRRM
Non‐repetitive Avalanche Energy @ TJ = 25 °C, L = 60 mH per Diode
EAS
Voltage rate of change (rated VR)
Operating Junction & Storage Temperature Range
dV/dt
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction‐to‐Case
RJC
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2013/8/15
EMS30D10E
LIMITS
100
30
15
160
1
210
10000
‐40 to 150
UNIT
V
A
mJ
V/μs
°C
MAXIMUM
2.5
UNIT
°C / W
p.1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet EMS30D10E.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| EMS30D10E | Schottky Rectifier ( Diode ) | Excelliance MOS |
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