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Numéro de référence | EMS10C10E | ||
Description | Schottky Rectifier ( Diode ) | ||
Fabricant | Excelliance MOS | ||
Logo | |||
High‐Voltage Trench Barrier Schottky Rectifier
Product Summary:
VRRM
VF @ IF=10A
IF(AV)
100V
0.58V
10A
Trench Schottky Technology
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Maximum Repetitive Peak Reverse Voltage
Maximum Average Forward Rectified Current
VRRM
IF(AV)
Peak Forward Surge Current 8.3mS Single Half Sine‐wave
Superimposed on Rated Load per Diode
IFSM
Peak Repetitive Reverse Current @ tp = 2 μs, 1 kHz,
TJ = 38 °C ± 2 °C per Diode
IRRM
Non‐repetitive Avalanche Energy @ TJ = 25 °C, L = 60 mH per Diode
EAS
Voltage rate of change (rated VR)
Operating Junction & Storage Temperature Range
dV/dt
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction‐to‐Case
RJC
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2015/4/2
EMS10C10E
LIMITS
100
10
150
1
150
10000
‐40 to 150
UNIT
V
A
mJ
V/μs
°C
MAXIMUM
2.8
UNIT
°C / W
p.1
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Pages | Pages 4 | ||
Télécharger | [ EMS10C10E ] |
No | Description détaillée | Fabricant |
EMS10C10E | Schottky Rectifier ( Diode ) | Excelliance MOS |
EMS10C10UC | Schottky Rectifier ( Diode ) | Excelliance MOS |
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