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Numéro de référence | EMS30D12E | ||
Description | Schottky Rectifier ( Diode ) | ||
Fabricant | Excelliance MOS | ||
Logo | |||
Dual High‐Voltage Trench Barrier Schottky Rectifier
Product Summary:
VRRM
VF @ IF=15A
IF(AV)
120V
0.66V
2 x 15A
Trench Schottky Technology
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Maximum Repetitive Peak Reverse Voltage
Maximum Average Forward Rectified Current
Per device
Per diode
VRRM
IF(AV)
Peak Forward Surge Current 8.3mS Single Half Sine‐wave
Superimposed on Rated Load per Diode
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
IFSM
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2015/4/30
EMS30D12E
LIMITS
120
30
15
150
‐40 to 150
UNIT
V
A
°C
MAXIMUM
2.8
UNIT
°C / W
p.1
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Pages | Pages 4 | ||
Télécharger | [ EMS30D12E ] |
No | Description détaillée | Fabricant |
EMS30D12E | Schottky Rectifier ( Diode ) | Excelliance MOS |
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