|
|
Numéro de référence | EMF16P01VAT | ||
Description | Field Effect Transistor | ||
Fabricant | Excelliance MOS | ||
Logo | |||
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐10V
D
RDSON (MAX.)
16mΩ
ID
‐10A
G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Bottom View
S DD
SD
GD D
PIN 1
SYMBOL
EMF16P01VAT
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
PD
Tj, Tstg
TYPICAL
±8
‐10
‐7.8
‐40
2.08
1.33
‐55 to 150
V
A
W
°C
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
360°C / W when mounted on a 1 in2 pad of 2 oz copper.
12
°C / W
60
2015/2/26
p.1
|
|||
Pages | Pages 5 | ||
Télécharger | [ EMF16P01VAT ] |
No | Description détaillée | Fabricant |
EMF16P01VAT | Field Effect Transistor | Excelliance MOS |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |