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PDF EMB30P03VAT Data sheet ( Hoja de datos )
| Número de pieza | EMB30P03VAT | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐30V
D
RDSON (MAX.)
30mΩ
ID ‐8A G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Bottom View
S DD
SD
GD D
PIN 1
SYMBOL
EMB30P03VAT
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
PD
Tj, Tstg
TYPICAL
±20
‐8
‐6.3
‐32
2.08
1.33
‐55 to 150
V
A
W
°C
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
360°C / W when mounted on a 1 in2 pad of 2 oz copper.
12
°C / W
60
2015/5/12
p.1
1 page  
EMB30P03VAT
Gate Threshold Voltage v.s. Junction Temperature
3.00
2.50
2.00
1.50
600
500
400
300
Sin gle P u lse M a xim u m P o w e r D issip a tio n
Sin g le P u lse
Rθ J A = 6 0 ° C / W
T A = 2 5 ° C
1.00
200
0.50
0
‐50 0 50 100 150
TJ ‐ Junction Temperature (°C)
100
0
0 .00 00 1 0.0 00 1
0.0 01
0 .01
t 1 , T im e ( s e c )
0 .1
1
Maximum Safe Operating Area
100
10 R D S (O N ) Limit
10μs
100μs
1ms
1
10ms
100ms
1s
DC
0.1
VG S = ‐10V
Single Pulse
R J A = 60°C/W
T A = 25°C
0.01
0.1 1
10 100
‐VD S ‐ Drain‐Source Voltage( V )
1
Duty Cycle = 0.5
Transient Thermal Response Curve
0.2
0.1
0.1
0.05
Notes:
0.02
0.01
0.01
Single Pulse
P DM
t1
t2
1.Duty Cycle,D =
t1
t2
2.Rθ J A = 60°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) * RθJA
0.001
10 ‐5
10‐4
10‐3
10 ‐2
10‐1
1
10 100
t 1 ,Time (sec)
2015/5/12
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMB30P03VAT.PDF ] | |
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