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PDF EMB03P03H Data sheet ( Hoja de datos )
| Número de pieza | EMB03P03H | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
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P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐30V
D
RDSON (MAX.)
3.1mΩ
ID
‐85A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB03P03H
LIMITS
UNIT
Gate‐Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
‐85
‐65
‐260
Avalanche Current
IAS ‐80
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=‐80A, RG=25Ω
L = 0.05mH
EAS
EAR
320
160
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
69
27
‐55 to 150
100% UIS testing in condition of VD=‐15V, L=0.1mH, VG=‐10V, IL=‐50A, Rated VDS=‐30V P‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
V
A
mJ
W
°C
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
1.8
62.5
°C / W
2016/3/9
p.1
1 page  
10
I D = ‐ 30A
8
6
Gate Charge Characteristics
VD S = ‐ 5V
‐ 15V
‐ 10V
4
2
0
0
20 40
60
80 100
Q g ‐ Gate Charge( nC )
EMB03P03H
10000
8000
6000
4000
2000
0
0
Capacitance Characteristics
Ciss
f = 1 MHz
VG S = 0 V
Coss
Crss
5 10 15 20 25
‐ V D S , Drain‐Source Voltage( V )
30
M a x i m u m S a f e O p e r a t i n g A r e a
103
R D S ( O N ) L i m i t e d
102
101
1 0 μ s
1 0 0 μ s
1 m s
1 0 m s
D C
100
T C = 2 5 °C
R θJ C = 1 . 8 °C / W
V g s = 1 0 V
S i n g l e P u l s e
10‐1 1 0‐1
1 00 1 01
‐ V D S , D r a i n ‐ S o u r c e V o l t a g e ( V )
1 02
3000
2500
2000
1500
1000
500
0
0.01
Single Pulse Maximum Power Dissipation
Single Pulse
RTθC J= C = 2 15°. 8C° C/W
0.1 1 10 100
Single Pulse Time( mSEC )
1000
1
D uty Cycle = 0.5
0 .5
0 .3
0 .2 0.2
0 .1 0.1
0 .0 5
0 .0 5
0.02
0.03
0 .0 1
0 .0 2
S in g le P u ls e
0.01
1 0‐2
1 0‐1
Transient Therm al Response Curve
N o te s:
DM
1.D uty Cycle,D =
t1
t2
2 .R θ J C = 1 .8 ° C / W
3 .TJ ‐ T C = P * R θ J C (t )
4 .R θ J C ( t ) = r ( t ) * Rθ JC
1 10
t 1 ,T im e ( m S E C )
100
1000
2016/3/9
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMB03P03H.PDF ] | |
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