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Numéro de référence | EMBA3P03JS | ||
Description | Field Effect Transistor | ||
Fabricant | Excelliance MOS | ||
Logo | |||
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐30V
D
RDSON (MAX.)
125mΩ
ID
‐3.1A
G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
PD
Tj, Tstg
TYPICAL
Junction‐to‐Ambient3
RJA (T ≤ 10sec)
RJA (Steady State)
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
3The device mounted on a 1 in2 pad of 2 oz copper.
2015/7/15
EMBA3P03JS
LIMITS
±20
‐3.1
‐2.1
‐12
1.04
0.66
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
83
120
UNIT
°C / W
p.1
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Pages | Pages 5 | ||
Télécharger | [ EMBA3P03JS ] |
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